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TISP1xxxF3 Overvoltage Protector Series
Description (continued)
High voltages can occur on the line as a result of exposure to lightning strikes and a.c. power surges. Negative transients are initially
limited by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar
holding current helps prevent d.c. latchup as the current subsides. Positive transients are limited by diode forward conduction. These
pro tectors are guaranteed to suppress and withstand the listed international lightning surges on any terminal pair.
These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control
and are virtually transparent to the system in normal operation.
Absolute Maximum Ratings, T A = 25 ° C (Unless Otherwise Noted)
Rating
Symbol
Value
Unit
Repetitive peak off-state voltage, 0 ° C < T A < 70 ° C
‘1072F3
‘1082F3
V DRM
-58
-66
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
1/2 (Gas tube differential transient, 1/2 voltage wave shape)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape)
1/20 (ITU-T K.22, 1.2/50 voltage wave shape, 25 ? resistor)
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape)
120
80
50
70
10/160 (FCC Part 68, 10/160 voltage wave shape)
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous)
0.2/310 (CNET I 31-24, 0.5/700 voltage wave shape)
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single)
5/320 (FCC Part 68, 9/720 voltage wave shape, single)
10/560 (FCC Part 68, 10/560 voltage wave shape)
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
Non-repetitive peak on-state current, 0 ° C < T A < 70 ° C (see Notes 1 and 3)
50 Hz, 1 s
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 38 A
Junction temperature
Storage temperature range
I PPSM
I TSM
di T /dt
T J
T stg
60
55
38
50
50
45
35
4.3
250
-65 to +150
-65 to +150
A
A
A/ μ s
° C
° C
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP ? must be in thermal equilibrium with 0 °C < T J <70 °C. The surge may be repeated after the TISP ? returns to its
initial conditions.
3. Above 70 °C, derate linearly to zero at 150 °C lead temperature.
Electrical Characteristics for R and T Terminal Pair, T A = 25 ° C (Unless Otherwise Noted)
I DRM
I D
Parameter
Repetitive peak off-
state current
Off-state current
Test Conditions
V D = ± V DRM , 0 ° C < T A < 70 ° C
V D = ± 50 V
Min
Typ
Max
± 10
± 10
Unit
μ A
μ A
f = 100 kHz, V d = 100 mV
C off
Off-state capacitance
V D = 0
0.08
0.5
pF
(see Note 4)
NOTE
4: Further details on capacitance are given in the Applications Information section.
SEPTEMBER 1993 - REVISED SEPTEMBER 2008
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
发布紧急采购，3分钟左右您将得到回复。
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